We also introduced a new method for measurement of electronic spin polarization of alkali atoms in high magnetic fields. 同时提出了强场下极化度的一种测量方法。
The Electronic Tunneling and Spin Polarization in the Coupled Quantum Dots System 一维双量子点系统的电子隧穿及电导
Current-induced spin polarization in spin-orbit coupling systems 自旋轨道耦合系统中的电流导致的自旋极化
Spin-polarized properties, including the spin scattering length and the spin polarization, are investigated at the temperature ranging from 77 to 300K. 在77~300K的温度范围内,对自旋散射长度、自旋极化率等自旋极化输运特性进行了研究。
However, the creation energy of polaron in the ferromagnetic metal was lower than that in ferromagnetic CMR/ conjugated polymer system, which made it possible the spin polarization transfer in conjugated polymers. 然而在铁磁CMR材料/聚合物系统中极化子的产生能低于聚合物中极化子的产生能,增加了有机物中自旋极化输运的可能性。
By using spin photocurrent and Kerr rotation experiments in a spin-orbit coupled system, we demonstrate how the injected spin can drive a current and how a current can conversely induce spin polarization. 文章通过自旋光电流与Kerr效应的实验,介绍在自旋-轨道耦合的体系中,如何通过自旋注入来驱动电子的运动产生电流,又如何反过来通过电子的运动或电流在系统中产生自旋激化。
Mott scattering and electron spin polarization Mott散射和电子极化术
Nuclear spin-polarized noble-gas atoms find a wide variety of applications in numerous fields such as nuclear physics, material sciences and magnetic resonance imaging. The technologies of nuclear spin polarization involve broad areas of atomic, molecular and optical physics. 核自旋极化的惰性气体原子在诸如核物理、材料科学和磁共振成像等许多领域中都有着广泛的应用,核自旋极化技术涉及领域很广,包括原子、分子和光学物理等等。
Time-resolved ESR and electron spin polarization 时间分辨ESR与电子自旋极化研究
We investigated theoretically the properties of spin polarization in organic polymer contacting magnetic atoms. 针对最近关于自旋注入有机体的实验研究,理论上计算了有机分子与磁性原子接触时的自旋极化现象。
Structure and Potential Energy Function and Spin Polarization Effect for Ti_2 Molecule Ti2分子的结构与势能函数及自旋极化效应
By using the coherent quantum transport theory and transfer matrix method, the transmission coefficient and spin polarization for polarized electrons with different spin orientations through ferromagnetic/ semiconductor/ ferromagnetic heterostructures have been investigated. 采用相干量子输运理论和传递矩阵方法,研究了具有不同自旋指向的极化电子渡越铁磁/半导体/铁磁异质结构的隧穿几率和自旋极化率。
We find that the spin polarization is quite large even with a weak spin – orbit interaction. 我们发现即使在弱的自旋轨道耦合下自旋极化率也可以达到很大。
Through bifurcations, the system enters into the spontaneous spin polarization regime from the Rabi regime. 通过分岔,系统从Rabi机制进入自发自旋极化机制。
It is shown that the spin polarization of this spin filter is closely related to the applied bias. 研究发现,该自旋过滤器中电子的自旋极化率与偏压密切相关。
Half-metallic ferromagnet is complete ( 100%) spin polarization and high Curie temperature. 半金属铁磁体是有完全的(100%)自旋极化率和较高的居里温度,是最佳的自旋极化注入源。
There is spin polarization in the studied systems. 4. 所研究的体系中均存在自旋极化和自旋离域现象。
But up to now, there are few reports on TMR to clarify the spin polarization of charge carriers of ZnO-based magnetic semiconductors. 但是到目前为止,很少有关于用磁性隧道结中的TMR去检测ZnO基磁性半导体中载流子自旋极化的报道。
It is found that asymmetry doping at the ribbon edge causes the the spin polarization effect, leading to the current split of two spins, and that under the AF state the heterojunction with symmetry doping shows the one direction conductivity and P-N junction effect. 研究发现,边缘的不对称性掺杂引起了自旋极化效应,使自旋电流发生分裂;而对称性掺杂的异质结在反铁磁构型下出现了明显的单向导电性,显示出P-N结效应。
Through TMR electrode electron bring spin polarization, and the degree of spin polarization has closely relation with TMR. 电子在通过具有TMR效应的电极时会产生自旋极化,而电子的自旋极化度与电极的TMR效应是密切相关的。
According to this and the Hubbard model, we work on the spin polarization in the Zigzag strip. 在此基础上结合哈伯德(Hubbard)模型研究了Zigzag条带中的电子自旋极化问题。
They can significantly modulate the electronic structures in the vicinity of the Fermi level and the spin polarization. 缺陷可以明显调制费米面附近的电子结构和自旋极化。
Spin polarization near the Fermi level may be excellent spin polarized electron emission sources. 费米能级附近的半金属很可能是很好的自旋极化场发射源。
At high temperatures, the phonon scattering has an impact on the suppression of the mobility peak and the spin polarization. 声子散射在高温时对电荷迁移率的峰值结构和自旋极化有很强的抑制作用。
So we study the spin polarization of field emission of these systems. 所以我们研究其自旋极化的场发射性质。
This phenomenon implies that the observed magnetoresistance is not the spin polarization related TMR. 这说明他们观察到的磁电阻并不是自旋极化相关的隧道磁电阻TMR。
Spin polarization in parallel double quantum dots embedded in arms of Aharonov-Bohm interferometer is investigated. 研究了嵌入到Aharonov-Bohm干涉仪中的平行双量子点中的自旋极化。
According to the result of Chapter three, we found that spin polarization are caused by the magnetic impurity, therefore, we use this important property of magnetic impurity to design a spin-OLEDs model. 通过第三章的研究,我们发现磁性杂质可以使自旋发生过滤,实现自旋极化,因此我们利用磁性杂质这一重要性质,设计提出自旋有机发光二极管模型。